Publications

International Journals

  1. G. Meneghesso, S. Levada, R. Pierobon , F. Rampazzo , E. Zanoni, A. Cavallini, M. Manfredi, S. Du, and I. Eliashevich, “Reliability analysis of GaN-Based LEDs for solid state illumination” IEICE Transaction on Electronics, Vol. E86-C, No. 10, pp. 2032-2038, October 2003
  2. G.Meneghesso, G.Verzellesi, R. Pierobon, F. Rampazzo , A. Chini, U.K.Mishra, C.Canali,E. Zanoni, “ Surface-related Drain current dispersion effects in AlGaN/GaN HEMTs ” Transaction on Electron Devices vol51, n.10 October 2004.
  3. F.Rampazzo, Pierobon-R,Pacetta D, Gaquiere C, Theron D, Boudart B,Meneghesso G, Zanoni E,Hot carrier aging degradation phenomena in GaN based MESFETs", Microelectronics Reliability Sept-Nov 2004, 44(9-11):1375-80
  4. P. Kordos, J. Bernát, M. Marso, H. Lüth, F. Rampazzo, G. Tamiazzo, R. Pierobon, and G. Meneghesso Influence of gate-leakage current on drain current collapse of unpassivated GaN/AlGaN/GaN high electron mobility transistors   Appl. Phys. Lett. 86 , 253511 (2005)
  5. F.Danesin, F.Zanon. S.Gerardin, F.Rampazzo , G.Meneghesso, E.Zanoni, A.Paccagnella, “Degradation induced by 2-MeV Alpha Particles on AlGaN/GaN High Electron Mobility Transistors ” Microelectronic Reliability, Vol. 46, n. 9-11, pp. 1750-1753 2006
  6. Meneghesso, G.; Rampazzo, F.; Kordos, P.; Verzellesi, G.; Zanoni, E.; Current Collapse and High-Electric-Field Reliability of Unpassivated GaN/AlGaN/GaN HEMTs Electron Devices, IEEE Transactions on , Volume 53,  Issue 12,  Dec. 2006 Page(s):2932 - 2941
  7. M. Faqir a , G. Verzellesi, F. Fantini, F. Danesin , F. Rampazzo , G. Meneghesso, E. Zanoni , A. Cavallini , A. Castaldini , N. Labat , A. Touboul , C. Dua Characterization and analysis of trap-related effectsin AlGaN–GaN HEMTs ,Microelectronics Reliability 47 (2007) 1639–1642
  8. G. Meneghesso, G. Verzellesi,F. Danesin, F. Rampazzo, F. Zanon,A.Tazzoli, M. Meneghini, E. Zanoni "Reliability of GaN High-Electron-Mobility Transistors:State of the Art and Perspectives"Invited Paper, IEEE Transactions on Device and Materials reliability, vol.8, NO.2, Jume 2008



Conference Proceeding

  1. G. Meneghesso, S. Levada, R. Pierobon, F. Rampazzo , E. Zanoni, A. Cavallini, A. Castaldini, G. Scamarcio, S. Du, I. Eliashevich, ‘Degradation mechanisms of GaN-based LEDs after accelerated DC current aging', Tech. Digest IEEE-IEDM2002 , IEEE International Electron Device Meeting, pp. 103-106, San Francisco, California, USA, December 8-11, 2002
  2. G. Verzellesi, R. Pierobon, F. Rampazzo , G. Meneghesso, A. Chini, D. Buttari, U.K. Mishra, C. Canali, E. Zanoni, ‘Experimental/Numerical Investigation on Current Collapse in AlGaN/GaN HEMT's' , Tech. Digest IEEE-IEDM2002 , IEEE International Electron Device Meeting, pp. 689-692, San Francisco, California, USA, December 8-11, 2002
  3. G. Meneghesso, S. Levada, R. Pierobon, F. Rampazzo , E. Zanoni, A. Cavallini, M.Manfredi, S. Du, I. Eliashevich, ‘Reliability analysis of GaN-based LEDs for solid state illumination' , Proc. of TWHM 2003, 5th Topical Workshop on Heterostructure Microelectronics, Bankoku-Shinryokan, Okinawa, Japan, January 21-24, 2003
  4. G. Meneghesso, G. Verzellesi, R. Pierobon , F. Rampazzo, A. Chini, C. Canali, E.Zanoni, ‘Current Collapse in AlGaN/GaN HEMT's analyzed by means of 2D Device Simulations' , Proc. of WOCSDICE 2003, 27th Workshop on Compound Semiconductor Devices and Integrated Circuits held in Europe, Fürigen, Switzerland, May 26-28, 2003
  5. G. Meneghesso, F. Rampazzo , G. Schenato, L. Cecchetto R. Pierobon , E. Zanoni, T.Suemitsu,T. Enoki, ‘Frequency transconductance and Gate-Lag dispersion in InAlAs/InGaAs/InP HEMTs' , Proc. of WOCSDICE 2003, 27th Workshop on Compound Semiconductor Devices and Integrated Circuits held in Europe, Fürigen, Switzerland, May 26-28, 2003
  6. A. Cavallini , A. Castaldini, G. Meneghesso, S. Levada, R. Pierobon, F. Rampazzo , E. Zanoni, G. Scamarcio, S. Du, I. Eliashevich, ‘ Defect diagnostics of degradation mechanisms of GaN-based LEDs after accelerated DC current ageing' , Gettering and Defect Engineering in Semiconductor Technology (GADEST 2003) , Fontaneallee, Zeuthen, Germany, September 21-26, 2003
  7. G. Meneghesso G. Verzellesi, R. Pierobon, F. Rampazzo , A. Chini, E. Zanoni, “Reliability aspects of GaN microwave devices” INVITED at EuMW 2003, 33th European Microwave Week, Short Course on: “Workshop on Reliability of Compound Semiconductor Devices”, Munich, Germany, October 6-10, 2003
  8. R. Pierobon, F. Rampazzo , G. Meneghesso, E. Zanoni, T.Suemitsu,T. Enoki, ‘ RF Frequency dispersion and frequency dependence of breakdown phenomena in InAlAs/InGaAs/InP HEMTs' Proc. of HETECH 2003, 12th European Heterostructure Technology Workshop, La Casona del Pinar, San Rafael, Segovia, Spain, October 12–15, 2003
  9. G. Meneghesso, G. Verzellesi, R. Pierobon, F. Rampazzo , A. Chini, E. Zanoni, 'Instabilities and degradation in GaN-based devices' , INVITED , Proc. of HETECH 2003, 12th European Heterostructure Technology Workshop, La Casona del Pinar, San Rafael, Segovia, Spain, October 12–15, 2003
  10. R. Pierobon , F. Rampazzo , L. Corradini, G. Meneghesso, E. Zanoni, J. Bernát, M. Marso and P. Kordoš, ‘ Unpassivated GaN/AlGaN/GaN HEMTs with very low DC to RF drain current dispersion' , Proc. of WOCSDICE 2004, 28th Workshop on Compound Semiconductor Devices and Integrated Circuits held in Europe, Castle of Smolenice, Bratislava, May 17-19, 2004
  11. R. Pierobon, F. Rampazzo , F. Clonfero, T. De Pellegrin, M. Bertazzo, G. Meneghesso, E. Zanoni, T. Suemitsu, T. Enoki, ‘Study of Breakdown dynamics in InAlAs/InGaAs/InP HEMTs with Gate Length scaling down to 80 nm' , 16th International Conference on Indium Phosphide and Related Materials, Nagoshima, Japan, May 31 - June 4, 2004
  12. F. Rampazzo , R. Pierobon, D. Pacetta, G. Meneghesso, E. Zanoni , C. Gaquiere, D. Theron, “Hot carrier aging degradation phenomena in GaN based MESFETs” , submitted to 15th European Symposium on Reliability of Electron Devices, Failure Physics and Analysis, ETH Zurich , Switzerland , 4-8 October 2004. ESREF 2004 Proceedings will be published as a special issue of the journal Microelectronics Reliability by Elsevier Science.
  13. R. Pierobon, F. Rampazzo , D.Pacetta, G. Meneghesso, E. Zanoni, C. Gaquiere, D. Theron, “ Analysis of Hot carrier aging degradation in GaN MESFETs ” ,ASDAM 2004 IEEE catalog number : 04EX867, ISBN:0-7803-8535-7
  14. R. Pierobon, F. Rampazzo , G. Meneghesso, E. Zanoni , J. Bernát 2 , M. Marso, P. Kordoš, A. F. Basile, G. Verzellesi Experimental and Simulated Gate Lag Transients in Unpassivated GaN/AlGaN/GaN HEMTs Proc. of HETECH 2004, 13th European Heterostructure Technology Workshop,2004
  15. A.Sozza, C. Dua, N. Sarazin, E. Morvan, S.L. Delage, F. Rampazzo , A. Tazzoli, F. Danesin, G.Meneghesso, E. Zanoni, A. Curutchet, N. M alb ert and N. Labat, " Traps characterization in Si-doped GaN/AlGaN/GaN HEMT on SiC by means of low frequency techniques “, Proc. of HETECH 2005-14th Inter nat ional Workshop on Heterostructure Technology,2005
  16. A.Sozza, C. Dua, E. Morvan, M. A. di Forte-Poisson, S. Delage, F. Rampazzo , A. Tazzoli, F. Danesin, G. Meneghesso, E. Zanoni, A. Curutchet, N. M alb ert , N. Labat, B. Grimber and J.-C. De Jaeger, " Evidence of traps creation in GaN/AlGaN/GaN HEMTs after a 3000 hour on-state and off-state hot electron stress “, Accepted at IEDM 2005, 2005 IEEE Inter nat ional Electron Devices Meeting –Washington, 5-7 December
  17. Meneghesso, G.; Pierobon, R.; Rampazzo, F.; Tamiazzo, G.; Zanoni, E.; Bernat, J.; Kordos, P.; Basile, A.F.; Chini, A.; Verzellesi, G.; Hot-electron-stress degradation in unpassivated GaN/AlGaN/GaN HEMTs on SiC Reliability Physics Symposium, 2005. Proceedings. 43rd Annual. 2005 IEEE International April 17-21, 2005 Page(s):415 - 422
  18. F. Zanon, F. Danesin, S. Gerardin, F. Rampazzo , G. Meneghesso, E. Zanoni, and A. Paccagnella, “Impact of 2-MeV Alpha Irradiation on AlGaN/GaN High Electron Mobility Transistors ”, WOCSDICE 2006 - 3 0th Workshop on Compound Semiconductor Devices and Integrated Circuits held in Europe
  19. M. Faqir, A. Chini1, G. Verzellesi*, F. Fantini, F. Rampazzo, G. Meneghesso, E. Zanoni, J. Bernat, P. Kordos Study of High-Field Degradation Phenomena in GaN-capped AlGaN/GaN HEMTs HETECH 2006
  20. Tetsuya Suemitsu, Yoshino K. Fukai, Masami Tokumitsu, Fabiana Rampazzo, Gaudenzio Meneghesso, Enrico Zanoni Improved stability in wide-recess InP HEMTs by means of a fully passivated two-step-recess gate . [IEICE Electron. Express,3(13),(2006),310-315]
  21. Faqir M.; Chini, A.; Verzellesi, G.; Fantini, F.; Rampazzo F. , Meneghesso, G.; Zanoni, E.; Bernat, J.; Kordos, P Physical Investigation of High-Field Degradation Mechanisms in GaN/AlGaN/GaN HEMTS , .; ROCS Workshop, 2006. [Reliability of Compound Semiconductors] Nov. 2006 Page(s):25 - 31 Digital Object Identifier 10.1109/ROCS.2006.323400
  22. WOCSdice 2007 papero verzellesi
  23. INVITED IEDM 2007: E. Zanoni, G. Meneghesso, G. Verzellesi, F. Danesin, M. Meneghini, F. Rampazzo, A. Tazzoli, F. Zanon, “A review of failure modes and mechanisms of GaN-based HEMT's” , invited paper at the 2007 IEEE Inter nat ional Electron Device Meetin, IEDM 2007.
  24. Verzellesi, G.; Faqir, M.; Chini, A.; Fantini, F.; Meneghesso, G.; Zanoni, E.; Danesin, F.; Zanon, F.; Rampazzo, F.; Marino, F.A.; Cavallini, A.; Castaldini, “False surface-trap signatures induced by buffer traps in AlGaN-GaN HEMTs, Reliability Physics Symposium, 2009 IEEE International Publication Year: 2009 , Page(s): 732 - 735.
  25. Verzellesi, G.; Faqir, M.; Chini, A.; Fantini, F.; Meneghesso, G.; Zanoni, E.; Danesin, F.; Zanon, F.; Rampazzo, F.; Marino, F.A.; Cavallini, A.; Castaldini, “False surface-trap signatures induced by buffer traps in AlGaN-GaN HEMTs, Reliability Physics Symposium, 2009 IEEE International Publication Year: 2009 , Page(s): 732 - 735.
  26. Enrico Zanoni, Gaudenzio Meneghesso, Matteo Meneghini, Antonio Stocco, Fabiana Rampazzo, Riccardo Silvestri, Isabella Rossetto, Nicolò Ronchi "Electric-field and thermally-activated failure mechanisms of AlGaN/GaN High Electron Mobility Transistors" 220th ECS Meeting and Electrochemical Energy Summit October 2011
  27. F. Rampazzo, A. Stocco, R. Silvestri, M. Meneghini, N. Ronchi, D Bisi*, F. Soci*, A. Chini*, G. Meneghesso and E. Zanoni Impact of Hot Electrons on the Reliability of AlGaN/GaN High Electron Mobility Transistors 20th HETECH 2011- Lille France
  28. A. Zanandrea, F. Rampazzo, A. Stocco, E. Zanoni, D Bisi, F. Soci, A. Chini, P. Ivo, J. Wuerfl, G. Meneghesso DC and Pulsed Characterization of GaN-based Single- and Double-Heterostructure Devices 20th HETECTH 2011- Lille France
  29. A. Zanandrea, E. Bahat-Treidel, F. Rampazzo, A. Stocco, M. Meneghini, E. Zanoni, O. Hilt, P. Ivo, J. Wuerfl, G. Meneghesso Single- and Double-Heterostructure GaN-HEMTs Devices for Power Switching Applications Best Student Paper at ESREF 2012
  30. D. Bisi, A. Stocco, F. Rampazzo, M. Meneghini, F. Soci, A. Chini, G. Meneghesso and E. Zanoni Correlation between drain current transient and double-pulse measurements in AlGaN/GaN HEMT trap analysis WOCSDICE 2012
  31. M. Meneghini,A. Zanandrea, F. Rampazzo, A. Stocco, M. Bertin, D. Pogany, E. Zanoni, G. Meneghesso Evidence for breakdown luminescence in AlGaN/GaN HEMTs" Best Paper to International Workshop on Nitride Semiconductors 2012