Curriculum vitae: Prof. Dr. Leo Lorenz received the Dipl. Ing. Degree from TU-Berlin and the Dr.-Ing. Degree from the University of Munich, Germany in 1972 and 1976 respectively. From 1976 til 1980 he was with AEG, R&D center for Power Electronics in Berlin. In 1980 he joined Siemens Semiconductor Division which became Infineon Technologies AG in 1999. Since this time he works on Power Semiconductor & Power IC's in different functions and responsibilities. In his position, as senior director he is responsible for all automotive and industrial technologies and for the time being located in Shanghai. He published over 250 technical papers and has many patents in these fields. In 2001 he was nominated to become Professor for System Integration at the University of Ilmenau (Germany). He is the president of the ECPE (European Center of Power Electronics) an IEEE Fellow and a member of German Academy of Science. Abstract: System integration and high power density design of monolithic devices, discrete components or multi-chip approach are the driving force for the progress in power electronic system development. Silicon utilization, system reliability, power units miniaturization and overall operating efficiency are the key factors. Power Semiconductor devices, smart power components and control IC's are the key elements of power electronic systems despite of the fact that their costs are minimal in many applications relatively to the overall system costs. Improving their characteristics along with an increasing functionality reduces the system cost and opens the opportunities for new fields of applications. New system trends are going towards high switching frequency reducing or eliminating bulky magnetics and capacitances as well as soft switching topologies for higher efficiency and low harmonics. In this presentation new technologies, advanced devices concepts and future system aspect for system-integration in the industrial and consumer segments are discussed. In both fields of applications there are huge requirements towards system dynamic characteristics overload capability, device ruggedness and build in reliability. There is a tendency towards higher operating temperature ratings and in the industrial field devices with high blocking voltage capabilities are needed. In the presentation a comparison of today and future device concepts like the Super Junction MOSFET for low and high breakdown voltage rating, the IGBT and the actual trends in SiC devices will be discussed in detail.