GaN-based power devices moving toward industrialization. Normally-offcharacteristics has been realized by introducing p-type AlGaN gatestructure, where holes can be injected into the channel reducing theon-resistance by conductivity modulation. Experimentally fabricated GaNGIT inverter system attained the world-highest conversion efficiencyover 99.3%. AlGaN/GaN Natural Super Junction was also developed toovercome the trade-off between the blocking voltage and theon-resistance. Further, we propose a fusion of microwave and powerdevices as Drive-by-Microwave technology, which will enable a new matrixconverter system in a simple manner. Direct liquid-immersion packagetechnology, where GaN chip are mounted inside the heat-pipe, ismentioned. The technology contributes to the dramatic reduction ofjunction temperature, which had been a problem caused by the increasedpower density of GaN devices.