Fabiana Rampazzo
Laboratory Assistant
Tel. +39 049827 7724, Fax. +39 049827 7748 e-mail: rampazzo@dei.unipd.it
Fabiana Rampazzo was born in Padova Italy, in 1976.She received the degree in Physics from the same university
2001 working on characterization and reliability of M.O.S. capacitors with Silicon Carbide substrate.
In 2005 she received the Ph.D. degree in electronics and telecommunications engineering with a thesis entitled
“" Current instabilities, passivation effects and other reliability aspects in AlGaN/GaN HEMTs for Microwave applications"”.
After that she was engaged as laboratory assistant in the same university.
Her main research topics includes the
characterization of microwave devices on III-V semiconductors such as GaAs and InP, with particular aim to transient phenomena;
Electrical characterization of electronic devices grown on wide bandgap semiconductors (SiC and GaN); reliability studies
of the long term stability of microwave devices with particular attention to their failure mode and mechanisms.
She was involved on the European Korrigan Project (Key Organisation for Research in Integrated
Circuits in GaN Technology) concerning GaN HEMTs reliability and now in Manga and AlInWOn FP7 project.