Wide Band-gap Semiconductor Devices: characterization and reliability

  • Characterization of GaN based transistors for RF and power applications, and of high-voltage/high current SiC devices.
  • Analysis of the trapping processes that limit the dynamic performance of the devices, based on current-DLTS, capacitance-DLTS, optical-DLTS, backgating investigation; development of physical models of the charge-trapping processes; study of the interface traps by C-V, Dit and Vth transient measurements; analysis of issues related to devices with Schottky, insulated and p-type gate.

Advanced solid-state devices

Wide Band-gap Devices for RF and energy efficiency

Study of GaN based and Ga2O3 transistors for RF and power applications, and of high-voltage/high current SiC devices.

Electronics

Information about PHD program (2015 application)

Please read the Admission Procedures page.

Research Areas

Bitcoin, an attempt at a separation of money and state

Grants for PhD International students - New call: deadline May 29, 2015

Mathematical Scientific Challenges of 5G

Do brains compute?

Design and Experimental Characterisation of High Brightness Diode Lasers and Arrays

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